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Radiation-enhanced diffusion of palladium for a local lifetime control in power devicesVOBECKY, Jan; HAZDRA, Pavel.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 6, pp 1521-1526, issn 0018-9383, 6 p.Article

Studies on dynamic avalanche and current filaments in high-voltage diodesNIEDERNOSTHEIDE, F.-J; SCHULZE, H.-J.Physica. D. 2004, Vol 199, Num 1-2, pp 129-137, issn 0167-2789, 9 p.Conference Paper

Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA LimitBABURSKE, Roman; NIEDERNOSTHEIDE, Franz-Josef; LUTZ, Josef et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 7, pp 2308-2317, issn 0018-9383, 10 p.Article

Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)LEFRANC, P; PLANSON, D; MOREL, H et al.Solid-state electronics. 2009, Vol 53, Num 9, pp 944-954, issn 0038-1101, 11 p.Article

The nn+-Junction as the Key to Improved Ruggedness and Soft Recovery of Power DiodesLUTZ, Josef; BABURSKE, Roman; MIN CHEN et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 11, pp 2825-2832, issn 0018-9383, 8 p.Article

Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminationsHEINZE, B; LUTZ, J; FELSL, H. P et al.Microelectronics journal. 2008, Vol 39, Num 6, pp 868-877, issn 0959-8324, 10 p.Conference Paper

Dynamic avalanche in diodes with local lifetime control by means of palladiumVOBECKY, J; HAZDRA, P.Microelectronics journal. 2008, Vol 39, Num 6, pp 878-883, issn 0959-8324, 6 p.Conference Paper

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature DependenceBRYANT, Angus; SHAOYONG YANG; MAWBY, Philip et al.IEEE transactions on power electronics. 2011, Vol 26, Num 9-10, pp 3019-3031, issn 0885-8993, 13 p.Article

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